TLE82453使用

1.TLE82453

1.1 TLE82453简介

TLE82453使用

1.2 TLE82453时序

TLE82453使用

注意读数据要读两次，第一次丢弃，第二次是需要的数值。

1.3 TLE82453 初始化

extern void TLE82453_Init(void) {   DWORD_U result = {0};   // Disable chip   TLE82453_EN_CLR;     // Set RESN pin from low to high.   TLE82453_RESN_CLR;   DelayMS(10);   TLE82453_RESN_SET;   DelayMS(20);     // Set Clock Divider Registe,M=38,N=7,so Fdith = 5MHZ/39/128=1KHZ   // Set Clock Divider Registe,M=38,N=7,so Fdith =1KHZ   result.dword = TLE82453_RWReg(0,TLE_W|RCLKDVD|FCLK_WDEN|FDITH_DIV_M|FDITH_DIV_N|FSYS_DIV_8);     // Set Configuration Register   result.dword = TLE82453_RWReg(0,TLE_W|RCFG|RCFG_FME|RCFG_FM0|RCFG_FM1|RCFG_FM2|RCFG_CH2_SR1|RCFG_CH1_SR1|RCFG_CH0_SR1);     // Integrator Threshold & Open On Register,Open load current = 58mA   result.dword = TLE82453_RWReg(0,TLE_W|RINTT_OL|CH0|RINTT_OL_VALUE);   result.dword = TLE82453_RWReg(0,TLE_W|RINTT_OL|CH1|RINTT_OL_VALUE);   result.dword = TLE82453_RWReg(0,TLE_W|RINTT_OL|CH2|RINTT_OL_VALUE);     // Set Autozero Register,RSETPOINT_EN must = 0,AZ is defualt function   //result.dword = TLE82453_RWReg(0,TLE_W|RAUTOZERO|RAUTOZERO_START|CH0);   //result.dword = TLE82453_RWReg(0,TLE_W|RAUTOZERO|RAUTOZERO_START|CH1);   //result.dword = TLE82453_RWReg(0,TLE_W|RAUTOZERO|RAUTOZERO_START|CH2);     // Set PWM period register,5MHZ/312/16 = 1KHZ   result.dword = TLE82453_RWReg(0,TLE_W|RPWM_PERIOD|RPWM_PERIOD_KI|RPWM_PERIOD_VALUE|CH0);   result.dword = TLE82453_RWReg(0,TLE_W|RPWM_PERIOD|RPWM_PERIOD_KI|RPWM_PERIOD_VALUE|CH1);   result.dword = TLE82453_RWReg(0,TLE_W|RPWM_PERIOD|RPWM_PERIOD_KI|RPWM_PERIOD_VALUE|CH2);     // Set Setpoint register,682*1500/2047=499.7mA   result.dword = TLE82453_RWReg(0,TLE_W|RSETPOINT|RSETPOINT_EN|RSETPOINT_AL|RSETPOINT_VALUE|CH0);    result.dword = TLE82453_RWReg(0,TLE_W|RSETPOINT|RSETPOINT_EN|RSETPOINT_AL|RSETPOINT_VALUE|CH1);    result.dword = TLE82453_RWReg(0,TLE_W|RSETPOINT|RSETPOINT_EN|RSETPOINT_AL|RSETPOINT_VALUE|CH2);       // Set Integrator Register   result.dword = TLE82453_RWReg(0,TLE_W|RINT_LIMIT|CH0|RINT_LIMIT_HL|RINT_LIMIT_LL);      result.dword = TLE82453_RWReg(0,TLE_W|RINT_LIMIT|CH1|RINT_LIMIT_HL|RINT_LIMIT_LL);      result.dword = TLE82453_RWReg(0,TLE_W|RINT_LIMIT|CH2|RINT_LIMIT_HL|RINT_LIMIT_LL);     // Set Dither Register,steps=3,step size=18,3*18*1500/2047=39.6mA   // SYNC = 1,so a new dither period will not start until the start of the next PWM cycle   result.dword = TLE82453_RWReg(0,TLE_W|RDITHER|CH0|RDITHER_EN|RDITHER_SYNC|RDITHER_SETP_SIZE|RDITHER_SETP_NUM(3));      result.dword = TLE82453_RWReg(0,TLE_W|RDITHER|CH1|RDITHER_EN|RDITHER_SYNC|RDITHER_SETP_SIZE|RDITHER_SETP_NUM(3));      result.dword = TLE82453_RWReg(0,TLE_W|RDITHER|CH2|RDITHER_EN|RDITHER_SYNC|RDITHER_SETP_SIZE|RDITHER_SETP_NUM(3));        // If no fault, enable chip   DelayUS(20);   TLE82453_RWReg(0,TLE_R|RDIAG);   DelayUS(20);   result.dword = TLE82453_RWReg(0,TLE_R|RDIAG);   DelayUS(20);   TLE82453_RWReg(0,TLE_R|RICVID);   DelayUS(20);   result.dword = TLE82453_RWReg(0,TLE_R|RICVID);   if( result.dword == RICVID_ID )     TLE82453_EN_SET; }

2.STM32F4XX实现简单颤振

2.1输出电流反馈采样率

采用ADC软件触发+DMA搬移，以使用两个通道为例，计算每个通道采样率。

The total conversion time is calculated as follows:

Tconv = Sampling time + 12 cycles

设置如下：

With ADCCLK = 15 MHz and sampling time = 28 cycles:

Tconv = 28 + 12 = 40 cycles，则单通道最大采样率为375kbps。

配置为28cycles以下采集不稳；

配置为28cycles，两个通道各取4次平均，能实现46.8k采样率；

配置为28cycles，两个通道各取8次平均，能实现23.4k采样率；

配置为28cycles，两个通道各取16次平均，能实现11.7k采样率；

配置为28cycles，两个通道各取32次平均，能实现5.85k采样率；

考虑恒流控制频率最大一般不会超过2KHZ，先选取11.7k采样率。

2.2 STM32F4XX实现颤振

STM32F4XX采用类似TLE82453的控制方法，并做一定的简化，例如step_size的刷新选择在输出PWM的溢出中断中进行，这样不需要再为颤振单独设置一个定时器了，默认颤振周期和PWM周期是同步的，颤振频率最大只能是输出PWM频率的1/4。PID的参数需要合理设置，响应时间要足够小，否则颤振效果较差。大多数场景可能只需要几路颤振，考虑到TLE82453的价格，损失部分性能可以接受，可以根据项目成本和性能要求折衷选择。

TLE82453使用